unisonic technologies co., ltd utt80p06 preliminary power mosfet www.unisonic.com.tw 1 of 3 copyright ? 2011 unisonic technologies co., ltd qw-r502-672.a 80a, 60v p-channel power mosfet ? description the utc utt80p06 is a p-channel power mosfet using utc?s advanced technology to provide the customers with high switching speed and a minimum on-state resistanc e, and it can also withstand high energy in the avalanche. the utc utt80p06 is suitable for low voltage and high speed switching applications ? features * r ds(on) =0.021 ? @ v gs =-10v, i d =-64a * high switching speed ? ordering information ordering number package pin assignment packing lead free halogen free 1 2 3 UTT80P06L-TA3-T utt80p06g-ta3-t to-220 g d s tube note: pin assignment: g: gate d: drain s: source
utt80p06 preliminary power mosfet unisonic technologies co., ltd 2 of 3 www.unisonic.com.tw qw-r502-672.a ? absolute maximum ratings (t j =25c, unless otherwise specified) parameter symbol ratings unit drain-source voltage v dss -60 v gate-source voltage v gss 20 v drain current continuous t c =25c i d -80 a t c =100c -64 a pulsed t c =25c i dm -320 a avalanche energy single pulsed e as 823 mj repetitive e ar 34 mj power dissipation t c =25c p d 313 w junction temperature t j +150 c storage temperature t stg -55~+150 c notes: absolute maximum ratings are those values beyo nd which the device could be permanently damaged. absolute maximum ratings are stress ratings only and functional device oper ation is not implied. ? thermal data parameter symbol ratings unit junction to case jc 0.4 c/w junction to ambient ja 62 c/w ? electrical characteristics (t j =25c, unless otherwise specified) parameter symbol test conditions min typ max unit off characteristics drain-source breakdown voltage bv dss i d =-250a, v gs =0v -60 v drain-source leakage current i dss v ds =-60v, v gs =0v, t j =25c -0.1 -1 a v ds =-60v, t c =150c -10 -100 a gate-source leakage current forward i gss v gs =+20v, v ds =0v +100 na reverse v gs =-20v, v ds =0v -100 na on characteristics gate threshold voltage v gs ( th ) v ds =v gs , i d =-5.5ma -2.1 -3 -4 v static drain-source on-state resistance r ds ( on ) i d =-64a, v gs =-10v 0.021 0.023 ? dynamic parameters input capacitance c iss v gs =0v, v ds =-25v, f=1.0mhz 4026 5033 pf output capacitance c oss 1252 1565 pf reverse transfer capacitance c rss 437 546 pf switching parameters total gate charge q g v dd =-48v, i d =-80a, v gs = -10v 115 173 nc gate to source charge q gs v dd =-48v, i d =-80a 27.4 41 nc gate to drain charge q gd 50 75 nc turn-on delay time t d ( on ) v dd =-30v, i d =-64a, r g =1 ? , v gs =-10v 24 36 ns rise time t r 18 27 ns turn-off delay time t d ( off ) 56 84 ns fall-time t f 30 45 ns source- drain diode ratings and characteristics maximum body-diode continuous current i s t c =25c -80 a maximum body-diode pulsed current i sm t c =25c -320 a drain-source diode forward voltage v sd i f =-80a, v gs =0v -1.2 -1.6 v
utt80p06 preliminary power mosfet unisonic technologies co., ltd 3 of 3 www.unisonic.com.tw qw-r502-672.a utc assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all utc products described or contained herein. utc products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. reproduction in whole or in part is prohibited without the prior writ ten consent of the copyright owner. the information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice.
|
